The InGaN Manufacturing patent portfolio consists of U.S. Patent Nos. 5,684,309 and 5,851,905, which relate to methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows in the manufacture of light emitting diodes (LEDs). The patented method is believed to be used in the manufacture of high-brightness LEDs (HB-LEDs).

Prior to the invention of the patents, a common problem in LED manufacture was the incorporation of Indium. InGaN's invention recognizes that controlling the amount of hydrogen gas in the deposition chamber allows for increased indium incorporation.

General Patent Corporation is the managing member of InGaN Manufacturing.