InGaN Manufacturing Technologies LLC (InGaN) is a subsidiary of, and is managed by, General Patent Corporation.

InGaN is the exclusive licensee of U.S. Patent Nos. 5,684,309 and 5,851,905, which relate to methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows in the manufacture of light emitting diodes (LEDs).

General Patent Corporation provides enforcement services for InGaN's patents.

This website provides information about InGaN's patents, plus news about the company's patent enforcement campaign.

For more information about InGaN Manufacturing Technologies, please see our About Us page.