The InGaN Manufacturing portfolio consists of U.S. Patent Nos. 5,684,309 and 5,851,905, which relate to methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows in the manufacture of light emitting diodes (LEDs).

View Patent No. 5,684,309 on Google Patents

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View Patent No. 5,851,905 on Google Patents

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